The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Apr. 04, 2001
Applicants:
Sang-wook Cheong, Chatham, NJ (US);
Bog-gi Kim, Busan, KR;
Inventors:
Sang-Wook Cheong, Chatham, NJ (US);
Bog-Gi Kim, Busan, KR;
Assignee:
Rutgers University, Piscataway, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01F 11/00 (2006.01); C01G 39/00 (2006.01); C01G 49/00 (2006.01); G01R 33/00 (2006.01); G01R 33/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
The room temperature, low field intergrain magnetoresistance (IMR) of the double perovsktite SrFeMOOis found to be highly tunable by doping either Ca or Ba into the Sr site. The dopant exerts a chemical pressure, changing the Curie temperature and the magnetic softness. The IMR at optimal doping (SrBaFeMoO) is approximately 3.5% in 100 Oe, and increases further in high fields. The unprecedented strength of the IMR in this highly spin polarized system provides new grounds for employing novel magnetic materials for new magnetic sensing applications and spin electronics.