Sunnyvale, CA, United States of America

Bob Hsino-Lun Lee

This inventor holds 3 USPTO granted patents. Top assignee: Chartered Semiconductor Manufacturing Ltd (Corporation). Active years: 1998-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bob Hsino-Lun Lee. Retrieved from https://idiyas.com/inventor/bob-hsino-lun-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 47(Granted Patents)


Company Filing History:


Years Active: 1998-2001

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3 patents (USPTO):Explore Patents

Title: Bob Hsino-Lun Lee: Innovator in Anti-Fuse Cell Technology

Introduction

Bob Hsino-Lun Lee is a notable inventor based in Sunnyvale, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of anti-fuse cells for programmable gate array applications. With a total of 3 patents to his name, Lee's work has had a lasting impact on integrated circuit design.

Latest Patents

One of Lee's latest patents focuses on the definition of an anti-fuse cell for programmable gate array applications. This patent describes a method for fabricating an anti-fuse cell using an undoped polysilicon film as a mask in defining the anti-fuse window. The process begins with providing a layer of silicon oxide over the surface of a semiconductor substrate. A first undoped polysilicon layer is then deposited over the silicon oxide layer. This layer is covered with a photoresist layer that is patterned to form a mask. The first undoped polysilicon layer and a portion of the silicon oxide layer are etched away where they are not covered by the mask to create a cell opening. After removing the mask and the remaining silicon oxide within the cell opening, an insulating layer is deposited over the surface of the first undoped polysilicon layer and within the cell opening. A second polysilicon layer is then deposited over the insulating layer and doped. Finally, the second polysilicon layer is patterned to form an anti-fuse cell, and gate electrodes along with source and drain regions are formed, completing the fabrication of the integrated circuit device.

Career Highlights

Bob Hsino-Lun Lee has been associated with Chartered Semiconductor Manufacturing Ltd, a corporation known for its advanced semiconductor manufacturing capabilities. His work at this company has allowed him to push the boundaries of technology in the semiconductor industry.

Collaborations

Throughout his career, Lee has collaborated with notable colleagues such as Che-Chia Wei and Lap Chan. These collaborations have contributed to the advancement of semiconductor technologies and innovations.

Conclusion

Bob Hsino-Lun Lee is a distinguished inventor whose work in anti-fuse cell technology has significantly influenced the semiconductor industry. His contributions continue to pave the way for future innovations in integrated circuit design.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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