Company Filing History:
Years Active: 2020
Title: Bo Zhang: Innovator in Random Access Memory Technology
Introduction
Bo Zhang is a notable inventor based in Pardubice, Czech Republic. He has made significant contributions to the field of electronics, particularly in the development of random access memory devices. His innovative approach has led to the creation of a unique method for forming metallic conductive filaments.
Latest Patents
Bo Zhang holds a patent titled "Method of forming a metallic conductive filament and a random access memory device for carrying out the method." This patent describes a random access memory device that comprises an inert-inert electrode cell and an inert-active electrode cell connected in series. The inert-inert electrode cell includes a top inert electrode, an electrolyte, and a bottom inert electrode. The inert-active electrode cell consists of a top active electrode, an electrolyte, and a bottom inert electrode. The design allows for efficient connectivity to a voltage source, enhancing the performance of memory devices. He has 1 patent to his name.
Career Highlights
Bo Zhang is affiliated with the University of Pardubice, where he continues to engage in research and development in the field of electronics. His work has garnered attention for its innovative approach to memory technology, contributing to advancements in the industry.
Collaborations
One of his notable collaborators is Tomas Wagner, with whom he has worked on various projects related to memory devices and their applications.
Conclusion
Bo Zhang's contributions to the field of random access memory technology highlight his innovative spirit and dedication to advancing electronic devices. His patent reflects a significant step forward in memory technology, showcasing his expertise and commitment to research.