Univerzita Pardubice

Bo Zhang

Tomas Wagner

A random access memory device () comprises inert-inert electrode cell () and inert-active electrode cell (). The inert-inert electrode cell () and inert-active electrode cell () are connected in series in a serial connection. The inert-inert electrode cell () comprises a top inert electrode (), an electrolyte () and a bottom inert electrode (), the inert-active electrode cell () comprises a top active electrode (), an electrolyte () and a bottom inert electrode (). The bottom inert electrode () of inert-inert electrode cell () is connected with negative electrode of voltage source () and the top active electrode () of inert-active electrode cell () is connected with positive electrode of voltage source ().

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Pardubice, Czechia

Bo Zhang