The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Feb. 21, 2018
Applicant:

Univerzita Pardubice, Pardubice, CZ;

Inventors:

Tomas Wagner, Pardubice, CZ;

Bo Zhang, Pardubice, CZ;

Assignee:

Univerzita Pardubice, Pardubice, CZ;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/085 (2013.01); G11C 13/0011 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/146 (2013.01); H01L 45/1641 (2013.01); G11C 2013/0083 (2013.01); G11C 2213/32 (2013.01); G11C 2213/52 (2013.01);
Abstract

A random access memory device () comprises inert-inert electrode cell () and inert-active electrode cell (). The inert-inert electrode cell () and inert-active electrode cell () are connected in series in a serial connection. The inert-inert electrode cell () comprises a top inert electrode (), an electrolyte () and a bottom inert electrode (), the inert-active electrode cell () comprises a top active electrode (), an electrolyte () and a bottom inert electrode (). The bottom inert electrode () of inert-inert electrode cell () is connected with negative electrode of voltage source () and the top active electrode () of inert-active electrode cell () is connected with positive electrode of voltage source ().


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