This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Bo-Yu Lai and Semiconductor Process Innovation.
Introduction
Bo-Yu Lai is an inventor associated with Taipei City, Taiwan. His patent work concerns FinFET device design and methods for reducing parasitic capacitance in semiconductor structures.
Latest Patents
The supplied information lists one patent for Lai: “Low-K Gate Spacer and Methods for Forming the Same.” The disclosure describes FinFET gate spacers formed through two or more depositions, using different materials at different processing stages. This approach is intended to reduce parasitic capacitance between gate structures and contacts introduced after source/drain epitaxy growth. Lai’s listed portfolio includes 1 patent.
Career Highlights
Lai is associated with Taiwan Semiconductor Manufacturing Co., Ltd. His listed patent reflects work on semiconductor fabrication techniques, particularly gate-spacer structures designed to improve electrical performance in FinFET devices.
Collaborations
The supplied information identifies Li Chun Te as Lai’s coworker. Their association is noted alongside Lai’s work connected with Taiwan Semiconductor Manufacturing Co., Ltd.
Conclusion
Bo-Yu Lai’s listed invention addresses parasitic capacitance in FinFET devices through a multi-deposition gate-spacer approach, highlighting a focused contribution to semiconductor process innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile