Bing R Hsieh

This inventor holds 80 USPTO granted patents and 5 published patent applications, plus 1 CIPO patent and 1 EPO patent, primarily in Electrochemical Devices (CPC class 430137). Top assignees: Xerox Corporation, Palo Alto Research Center Inc., Canon Kabushiki Kaisha. Active years: 1989-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bing R Hsieh. Retrieved from https://idiyas.com/inventor/bing-r-hsieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 80 (Patent Applications = 5)

% Patents Active = 81.3

CIPO Patents = 1

EPO Patents = 1 (Patent Applications = 3)

Average Co-Inventor Count = 3.0

ph-index = 17

Forward Citations = 986(Granted Patents)

Forward Citations (Not Self Cited) = 967(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Webster, NY (US) (1989 - 2008)
Pleasanton, CA (2014)
Plesanton, CA (US) (2018)
South San Francisco, CA (US) (2020)
Pleasanton, CA (US) (2013 - 2023)

Company Filing History:

Palo Alto Research Center Inc.

patents

5 out of 93,136

Canon Kabushiki Kaisha

Nu-Kote International, Inc.

patents

7. 2 out of 834,601

Other

patents

where one patent can have more than one assignee

Years Active: 1989-2023

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Areas of Expertise:

Microchip Charge Patterning

Lithium-Ion Batteries

Organic Schottky Diodes

Printed Supercapacitors

High Ionic Conductivity Electrolytes

Flexible Imaging Members

Electrostatographic Imaging

Organic Light-Emitting Devices

Polymer Electrolyte Materials

Photosensitive Members

Toner Compositions

Semiconducting Materials

80 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11574876 - Microchip charge patterning (2023-02-07),

2. 10593945 - Printed planar lithium-ion batteries (2020-03-17),

3. 10283725 - Organic Schottky diodes (2019-05-07),

4. 10245820 - Forming sacrificial structures using phase-change materials that sublimate (2019-04-02),

5. 10014261 - Microchip charge patterning (2018-07-03),

6. 9972447 - Printed supercapacitors based on graphene (2018-05-15),

7. 9956801 - Printing plates doped with release oil (2018-05-01),

8. 9356248 - Organic thin-film transistor (2016-05-31),

9. 9219126 - High-k dielectrics with a low-k interface for solution processed devices (2015-12-22),

10. 9048507 - High ionic conductivity electrolytes from poly(siloxanes-co-ethylene oxide) (2015-06-02),

11. 8916670 - Electrochemical devices based on block copolymers (2014-12-23),

12. 8771787 - Ink for digital offset printing applications (2014-07-08),

13. 8691928 - Polymer electrolyte materials based on block copolymers (2014-04-08),

14. 8685769 - Microchip charge patterning (2014-04-01),

15. 8598273 - High ionic conductivity electrolytes from block copolymers of grafted poly(siloxanes-co-ethylene oxide) (2013-12-03),

Title: Bing R Hsieh: Pioneering Inventor from Webster, NY

Introduction: Bing R Hsieh is a distinguished inventor hailing from Webster, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Bing R Hsieh holds several patents in various technological domains, showcasing his versatility and ingenuity in inventing cutting-edge solutions for complex problems.

Career Highlights: Throughout his illustrious career, Bing R Hsieh has consistently pushed the boundaries of innovation, leading to the development of revolutionary technologies that have transformed industries and improved the lives of many.

Collaborations: Bing R Hsieh has collaborated with leading experts, researchers, and organizations in the technology sector, fostering a culture of innovation and knowledge sharing that has paved the way for numerous breakthroughs.

Conclusion: Bing R Hsieh's relentless pursuit of innovation and his passion for creating solutions that make a difference have solidified his reputation as a visionary inventor, inspiring the next generation of innovators to push the limits of what is possible.

Profile summary based on public USPTO records.