Taoyuan, Taiwan

Bing-Jung Chen


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Innovations by Bing-Jung Chen in Crystal Growth Technology.

Introduction

Bing-Jung Chen is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of crystal growth technology. His innovative approach has led to the development of a unique heat shield and crystal growth equipment.

Latest Patents

Bing-Jung Chen holds a patent for a heat shield and crystal growth equipment. This invention features a length-adjustable and hybrid-angle heat shield designed for crystal growth equipment. The heat shield not only guides inert gas flow but also accelerates the flow rate of the gas and the cooling rate of the crystal. This enhancement raises the axial temperature gradient at the solid-molten interface, thereby increasing the growth rate of the crystal and overall productivity. Additionally, the heat shield reduces the likelihood of microdefect nucleation, improving the quality of the crystal. The adjustable length of the heat shield accommodates different crucibles from various manufacturers, which helps in reducing manufacturing costs.

Career Highlights

Bing-Jung Chen is affiliated with National Central University, where he continues to advance research in crystal growth technologies. His work has garnered attention for its practical applications in semiconductor manufacturing.

Collaborations

Bing-Jung Chen collaborates with esteemed colleagues such as Jyh-Chen Chen and Gwo-Jiun Sheu. Their combined expertise contributes to the innovative research and development in their field.

Conclusion

Bing-Jung Chen's contributions to crystal growth technology through his innovative patent demonstrate his commitment to enhancing the quality and efficiency of semiconductor manufacturing. His work continues to influence the industry positively.

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