The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2007
Filed:
Nov. 01, 2005
Jyh-chen Chen, Taoyuan, TW;
Bing-jung Chen, Taoyuan, TW;
Gwo-jiun Sheu, Taoyuan, TW;
Farn-shiun Hwu, Taoyuan, TW;
Jyh-Chen Chen, Taoyuan, TW;
Bing-Jung Chen, Taoyuan, TW;
Gwo-Jiun Sheu, Taoyuan, TW;
Farn-Shiun Hwu, Taoyuan, TW;
National Central University, Taoyuan, TW;
Abstract
A heat shield and a crystal growth equipment are provided, in which the length-adjustable and hybrid-angle heat shield is provided for the crystal growth equipments. The heat shield is adapted for not only guiding the inert gas flow but also speeding up the flow rate of the gas and the cooling rate of the crystal so as to raise the axial temperature gradient at the solid-molten interface, the growth rate of the crystal and the productivity. The heat shield further can also reduce the possibility of microdefect nucleation to improve the quality of crystal at the same time. In addition, the length of heat shield can be adjusted according to the distance between the heat shield and the semiconductor material melt in different crucibles in case that the crucibles are made by different factories. This can reduce the cost of the heat shield manufacturing.