This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Xidian University. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: The Innovations of Bin Wang
Introduction
Bin Wang is a prominent inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of CMOS structures. His work focuses on enhancing the performance and reliability of integrated circuits.
Latest Patents
Bin Wang holds 1 patent for his innovative CMOS structure and fabrication methods of FinFET CMOS, FD CMOS, and GAA CMOS. This patent describes a CMOS structure that includes both nMOS and pMOS components. The nMOS features a first channel region and a first gate electrode formed on a semiconductor substrate, while the pMOS includes a second channel region and a second gate electrode. Notably, both channel regions are made from semiconductor materials with the same conductivity type, and the gate electrodes are formed from conductive materials with the same work function. This design reduces the processing steps required for fabricating CMOS, thereby simplifying the process and lowering production costs. This innovation is beneficial for improving the overall performance and reliability of CMOS and its integrated circuits.
Career Highlights
Bin Wang is affiliated with Xidian University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its practical applications in the electronics industry.
Collaborations
Bin Wang has collaborated with notable colleagues, including Huiyong Hu and Liming Wang. Their joint efforts contribute to the ongoing advancements in semiconductor research.
Conclusion
Bin Wang's contributions to CMOS technology exemplify the importance of innovation in the field of electronics. His work not only simplifies manufacturing processes but also enhances the performance of integrated circuits.