This inventor holds 1 USPTO granted patent. Top assignee: Xidian University. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: The Innovations of Bin Shu
Introduction
Bin Shu is a prominent inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of CMOS structures. His work focuses on enhancing the performance and reliability of integrated circuits.
Latest Patents
Bin Shu holds 1 patent related to a CMOS structure and fabrication methods for FinFET CMOS, FD CMOS, and GAA CMOS. This innovative patent outlines a CMOS structure that includes both nMOS and pMOS components. The nMOS features a first channel region and a first gate electrode formed on a semiconductor substrate, while the pMOS includes a second channel region and a second gate electrode. Notably, both channel regions are made from semiconductor materials with the same conductivity type, and the gate electrodes are formed from conductive materials with the same work function. This design reduces the processing steps required for fabricating CMOS, thereby simplifying the process and lowering production costs. Such advancements are crucial for improving the overall performance and reliability of CMOS and its integrated circuits.
Career Highlights
Bin Shu is affiliated with Xidian University, where he continues to engage in research and development in semiconductor technologies. His academic background and ongoing projects contribute to the advancement of the field.
Collaborations
Bin Shu has collaborated with notable colleagues, including Huiyong Hu and Liming Wang. Their joint efforts in research have furthered the understanding and application of semiconductor technologies.
Conclusion
Bin Shu's innovative work in CMOS technology exemplifies the importance of advancements in semiconductor fabrication methods. His contributions are vital for the future of integrated circuits and their applications in various technologies.