Hubei, China

Bin Sheng

This inventor holds 3 USPTO granted patents. Top assignee: Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bin Sheng. Retrieved from https://idiyas.com/inventor/bin-sheng-asv9m42k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.1

ph-index = 2

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2020

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3 patents (USPTO):Explore Patents

Title: The Innovations of Bin Sheng

Introduction

Bin Sheng is a notable inventor based in Hubei, China. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work primarily focuses on enhancing the performance and efficiency of flash memory systems.

Latest Patents

One of his latest patents is a sense amplifier designed for flash memory. This innovative sense amplifier includes a pre-charging circuit, a first capacitor, a first inverter, and a first transmission gate connected in parallel with the first inverter. The pre-charging circuit is connectable to a reference voltage node, allowing it to pre-charge a word line of the flash memory. The potential of the reference voltage node remains unchanged after pre-charging is completed, and it can be adjusted according to the state of the flash memory until the output voltage of the first inverter changes. The first capacitor connects to the reference voltage node and the input of the first inverter, while the output of the first inverter connects to the first transmission gate.

Another significant patent by Bin Sheng is a charge pump drive circuit. This circuit includes a first pulse generating circuit and a second pulse generating circuit, both configured to connect to a charge pump. The first pulse generating circuit provides a series of first pulse signals to the charge pump, while the second pulse generating circuit generates a second pulse signal based on an address translation detection signal. This second pulse signal can be provided to the charge pump or to the first pulse generating circuit, allowing for additional first pulse signals to be generated.

Career Highlights

Bin Sheng is currently employed at Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. His work at this company has allowed him to develop and patent innovative technologies that enhance semiconductor performance.

Collaborations

He has collaborated with notable coworkers such as Shengbo Zhang and Yuan Tang, contributing to the advancement of semiconductor technologies.

Conclusion

Bin Sheng's contributions to the field of semiconductor technology through his patents demonstrate his innovative spirit and commitment to advancing technology. His work continues to influence the development of efficient flash memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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