The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2020

Filed:

Dec. 19, 2018
Applicant:

Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Wuhan, Hubei, CN;

Inventors:

Yuan Tang, San Jose, CA (US);

Bin Sheng, Hubei, CN;

Byoung Kwon Cha, San Jose, CA (US);

Yi Xu, Hubei, CN;

Jen-Tai Hsu, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/02 (2006.01); G05F 3/20 (2006.01); G11C 16/14 (2006.01); G11C 16/30 (2006.01); H02M 3/07 (2006.01);
U.S. Cl.
CPC ...
G05F 3/02 (2013.01); G05F 3/205 (2013.01); G11C 16/14 (2013.01); G11C 16/30 (2013.01); H02M 3/07 (2013.01);
Abstract

A circuit for regulating a leakage current in a charge pump is disclosed. The circuit includes a bias voltage generating circuit and a first transistor, wherein: the bias voltage generating circuit generates a bias voltage that is proportional to a supply voltage; a gate of the first transistor is coupled to the bias voltage; the first transistor has a drain that is coupled to an output of the charge pump and a source that is grounded; a voltage the drain of the first transistor is proportional to the supply voltage; and a current flowing through the source and drain of the first transistor is proportional to the supply voltage that powers the charge pump.


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