This inventor holds 1 USPTO granted patent. Top assignee: United States of America as Represented by the Secretary of the Air Force. Active years: 1986.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1986
Title: The Innovations of Bijan Davari
Introduction
Bijan Davari is a notable inventor based in Peekskill, NY (US). He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the capabilities of electrochemical pattern generation.
Latest Patents
Bijan Davari holds a patent for the "Selective anodic oxidation of semiconductors for pattern generation." This invention describes an apparatus and method for selectively controlling anodic oxide growth on semiconductors. It incorporates the use of a writing beam of a wavelength that encourages oxide growth and a bias beam at a wavelength that discourages oxide growth. The bias beam is projected onto the semiconductor in an electrolytic environment to prevent or retard oxide growth, while oxide growth is accelerated at points of illumination by means of the writing beam. This innovative approach allows for precise control in semiconductor manufacturing.
Career Highlights
Bijan Davari is currently associated with the United States of America as represented by the Secretary of the Air Force. His work in this capacity has allowed him to contribute to advancements in technology that support national interests.
Collaborations
Bijan has collaborated with Pankaj K Das, further enhancing the scope and impact of his inventions.
Conclusion
Bijan Davari's innovative work in semiconductor technology exemplifies the importance of precision in modern manufacturing processes. His contributions continue to influence the field significantly.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile