The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 1986
Filed:
Nov. 01, 1984
Applicant:
Inventors:
Bijan Davari, Peekskill, NY (US);
Pankaj K Das, Latham, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C25D / ; C25D / ;
U.S. Cl.
CPC ...
204 15 ; 2042 / ; 204D / ;
Abstract
Apparatus and method for selectively controlling anodic oxide growth on semiconductors for controlled electrochemical pattern generation incorporating use of a writing beam of a wavelength which encourages oxide growth and a bias beam at a wavelength which discourages oxide growth. The bias beam is projected on the semiconductor in electrolytic environment to prevent or retard oxide growth while oxide growth is accelerated at points of illumination by means of writing beam.