Hubei, China

Biao Yang

This inventor holds 1 USPTO granted patent. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Biao Yang: Innovator in Memory Systems

Introduction

Biao Yang is a prominent inventor based in Hubei, China. He has made significant contributions to the field of memory systems, particularly through his innovative patent. His work focuses on enhancing the efficiency and reliability of memory devices.

Latest Patents

Biao Yang holds a patent for "Memory systems with parity data generated using latches in memory devices." This patent describes a memory system that includes a memory controller and a memory device equipped with a latch. The memory controller sends commands that enable the memory device to perform logical operations on data, resulting in the generation of parity data. This innovation aims to improve data integrity and operational efficiency in memory systems.

Career Highlights

Biao Yang is associated with Yangtze Memory Technologies, Ltd., where he applies his expertise in memory technology. His work has been instrumental in advancing the capabilities of memory devices, contributing to the company's reputation as a leader in the semiconductor industry.

Collaborations

Biao Yang collaborates with talented individuals such as Suyi Liu and Lu Guo. Their combined efforts in research and development have led to significant advancements in memory technology.

Conclusion

Biao Yang's contributions to memory systems exemplify the innovative spirit of modern inventors. His patent and work at Yangtze Memory Technologies, Ltd. highlight the importance of advancements in technology for improving data management and storage solutions.

Profile summary based on public USPTO records.
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