BethAnn Lawrence

Title: The Innovative Contributions of BethAnn Lawrence

Introduction

BethAnn Lawrence is a prominent inventor based in Essex Junction, VT (US). She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her work focuses on advanced structures and methods that enhance the performance and reliability of semiconductor devices.

Latest Patents

Among her latest patents is a groundbreaking invention titled "Structures with contact trenches and isolation trenches." This patent describes structures that include contact trenches and isolation trenches, along with methods for forming these structures. A contact trench is formed that extends through a device layer of a silicon-on-insulator (SOI) substrate to a buried oxide layer. An isolation trench is also formed that extends through the device layer to the buried oxide layer. The invention involves depositing an electrical insulator that fills the contact trench and the first isolation trench, followed by the removal of the insulator from the contact trench. Subsequently, an electrical conductor is formed in the contact trench, which may be coupled with a doped region in a handle wafer of the SOI substrate.

Another notable patent is for "Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches." This patent provides a method of forming a semiconductor structure in a semiconductor-on-insulator (SOI) substrate. The structure includes first and second openings formed simultaneously, extending from the top surface of the semiconductor layer through to the conductive region. The invention also features insulating materials that provide electrical insulation and define device isolation trenches.

Career Highlights

BethAnn Lawrence is currently employed at GlobalFoundries Inc., where she continues to innovate in the semiconductor industry. Her work has been instrumental in advancing semiconductor technology, particularly in the areas of device isolation and electrical contact.

Collaborations

Throughout her career, BethAnn has collaborated with notable colleagues, including Natalie Barbara Feilchenfeld and Yun Shi. These collaborations have contributed to her success and the development of her innovative patents.

Conclusion

BethAnn Lawrence's contributions to semiconductor technology through her patents and work at GlobalFoundries Inc. highlight her role as a leading inventor in the field. Her innovative approaches to contact and isolation trenches are paving the way for advancements in semiconductor devices.