Company Filing History:
Years Active: 2020-2021
Title: The Innovations of Bertrand Parvais
Introduction
Bertrand Parvais is a notable inventor based in Nil-Saint-Vincent, Belgium. He has made significant contributions to the field of semiconductor technology, particularly in the development of heterojunction bipolar transistors and low-temperature voltage references. With a total of 2 patents to his name, Parvais continues to push the boundaries of innovation in his field.
Latest Patents
One of his latest patents is titled "Method for forming a heterojunction bipolar transistor and a heterojunction bipolar transistor device." This patent outlines a method that includes forming a doped region in a group IV semiconductor layer, followed by the growth of a III-V semiconductor body on the doped region. The process culminates in the creation of a semiconductor layer stack that comprises a collector, a base, and an emitter.
Another significant patent is "Low-temperature voltage reference using coulomb blockade mechanism." This invention describes a method for generating a reference voltage using single-electron transistors (SETs) connected in series. The method involves biasing both SETs with the same current and operating them at different Coulomb peaks to generate a reference voltage based on the difference in gate-to-source voltages.
Career Highlights
Throughout his career, Bertrand Parvais has worked with esteemed organizations such as Imec and Vrije Universiteit Brussel. His work at these institutions has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research in semiconductor technology.
Collaborations
Parvais has collaborated with notable colleagues, including Veeresh Vidyadhar Deshpande and Gaspard Hiblot. These collaborations have further enriched his research and innovation efforts.
Conclusion
Bertrand Parvais is a distinguished inventor whose work in semiconductor technology has led to significant advancements. His patents reflect his commitment to innovation and his contributions to the field will continue to influence future developments.