The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Jun. 25, 2019
Imec Vzw, Leuven, BE;
Gaspard Hiblot, Heverlee, BE;
Bertrand Parvais, Nil-Saint-Vincent, BE;
IMEC VZW, Leuven, BE;
Abstract
Example embodiments relate to low-temperature voltage references using Coulomb blockade mechanisms. One embodiment includes a method of generating a reference voltage. The method includes providing a first single-electron transistor (SET) and a second SET connected in series. The method also includes biasing the first SET and the second SET using a same biasing current (I). Further, the method includes operating the first SET at a slope of a first Coulomb peak and the second SET at a slope of a second Coulomb peak. The slope of the first Coulomb peak and the second Coulomb peak are of the same slope type selected from a rising slope, a peak maximum, and a falling slope. The second Coulomb peak is different from the first Coulomb peak. Additionally, the method includes generating the reference voltage (V) based on a difference between gate-to-source voltages of the first SET (V) and the second SET (V).