Bernhard Neureither

Title: Bernhard Neureither: Innovator in Semiconductor Technology

Introduction

Bernhard Neureither is a notable inventor based in Hoehenkirchen, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Neureither holds a patent for a "Process for fabricating a buried, laterally insulated zone of increased conductivity in a semiconductor substrate." This invention involves creating a laterally insulated buried zone of increased conductivity within a semiconductor substrate. The process begins with the formation of a reference layer on a substrate that contains a buried zone of increased conductivity. Following this, the reference layer is patterned, and a trench is produced in the substrate. Insulation material is then applied to fill the trench, resulting in a planar surface. The growth rate of the insulation material in the trench is designed to be faster than that on the reference layer adjacent to the trench. This innovative approach ensures that the insulation material's growth rate on the reference layer is significantly slower, enhancing the overall efficiency of the semiconductor substrate.

Career Highlights

Neureither is associated with Infineon Technologies AG, a leading company in semiconductor solutions. His work has contributed to advancements in the industry, showcasing his expertise and innovative thinking.

Collaborations

Throughout his career, Neureither has collaborated with notable colleagues, including Norbert Elbel and Zvonimir Gabric. These collaborations have further enriched his contributions to semiconductor technology.

Conclusion

Bernhard Neureither's innovative work in semiconductor technology, particularly through his patented processes, highlights his significant role in advancing the field. His contributions continue to influence the industry and inspire future innovations.