The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Jan. 25, 1999
Norbert Elbel, München, DE;
Zvonimir Gabric, Zorneding, DE;
Bernhard Neureither, Hoehenkirchen, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A laterally insulated buried zone of increased conductivity is fabricated in a semiconductor substrate. First, a reference layer is formed on a substrate with a buried zone of increased conductivity. Then the reference layer is patterned. A trench is produced in the substrate, and the insulation material used for filling the trench is applied to the structure thus produced. A planar surface is thereby formed in that the growth rate in the trench is faster than the growth rate on the reference layer adjacent the trench. Here, the reference layer is chosen such that the growth rate of the insulation material on the reference layer is at least a factor of two less than the growth rate of the insulation material on the surface of the trench which is to covered. This trench surface to be covered will usually be composed of substrate material. However, intermediate layers may also be provided.