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Years Active: 2004-2015
Title: Bernd Szyszka: Innovator in Transparent Conductive Materials
Introduction
Bernd Szyszka is a notable inventor based in Braunschweig, Germany. He has made significant contributions to the field of materials science, particularly in the development of transparent and conductive metal oxide layers. With a total of 4 patents, Szyszka's work has implications for various applications, including electronics and optics.
Latest Patents
One of Szyszka's latest patents is a method for producing a transparent and conductive metal oxide layer by highly ionized pulsed magnetron sputtering. This innovative method involves atomizing at least one component of the metal oxide layer to condense on a substrate. The process utilizes magnetron pulses with a peak power density exceeding 1.5 kW/cm and a duration of less than 200 microseconds. Additionally, the average increase in current density during plasma ignition is at least 106 A/(ms cm). Another significant patent relates to a glass product that features a glass substrate with a transparent and conductive indium tin oxide layer. This layer is enhanced by a covering layer that acts as a redox barrier, ensuring the integrity and performance of the indium tin oxide layer.
Career Highlights
Throughout his career, Szyszka has worked with prominent organizations, including the Fraunhofer Society for the Advancement of Applied Research and Audi AG. His experience in these institutions has allowed him to refine his expertise in materials science and engineering.
Collaborations
Szyszka has collaborated with notable colleagues such as Felix Horstmann and Volker Sittinger. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.
Conclusion
Bernd Szyszka's innovative work in the field of transparent conductive materials has established him as a key figure in materials science. His patents reflect a commitment to advancing technology and improving the functionality of electronic components.