Benoît Sklenard

Title: The Innovations of Benoît Sklenard

Introduction

Benoît Sklenard is a notable inventor based in Grenoble, France. He has made significant contributions to the field of non-volatile memory technology. With a total of two patents to his name, his work has implications for the future of data storage.

Latest Patents

Benoît Sklenard's latest patents include an "Oxide-based resistive non-volatile memory cell and method for manufacturing same." This invention features a resistive non-volatile memory cell that consists of a first electrode, a second electrode, and an oxide layer positioned between them. The memory cell can switch between a high resistance state and a low resistance state by applying different bias voltages. The oxide layer contains a switching zone that forms a conduction path prioritized for current flow when in the low resistance state. Additionally, he has developed a "Device for selecting a memory cell," which includes a first electrode, a second electrode, and an oxide layer doped with a first element from column IV of the periodic table.

Career Highlights

Benoît has worked with the Commissariat à l'Énergie Atomique et aux Énergies Alternatives, where he has contributed to various research projects. His expertise in memory technology has positioned him as a key figure in the development of innovative storage solutions.

Collaborations

Throughout his career, Benoît has collaborated with notable professionals such as Laurent Grenouillet and Marios Barlas. These partnerships have enhanced his research and development efforts in the field of memory technology.

Conclusion

Benoît Sklenard's contributions to non-volatile memory technology demonstrate his innovative spirit and commitment to advancing the field. His patents reflect a deep understanding of the complexities involved in memory cell design and manufacturing.