Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics S.a.

Benoît Sklenard

Laurent Grenouillet

Elisa Vianello

Perrine Batude

Frédéric Mazen

Marios Barlas

Philippe Blaise

Shay Reboh

A resistive non-volatile memory cell includes a first electrode, a second electrode and an oxide layer disposed between the first electrode and the second electrode, the memory cell being capable of reversibly switching between: &#x2014;a high resistance state obtained by applying a first bias voltage between the first electrode and the second electrode; and&#x2014;a low resistance state obtained by applying a second bias voltage between the first electrode and the second electrode; the oxide layer including a switching zone forming a conduction path prioritised for the current passing through the memory cell when the memory cell is in the low resistance state. The oxide layer includes a first zone doped with aluminium or silicon, the aluminium or silicon being present in the first zone with an atomic concentration that is selected so as to locate the switching zone outside the first zone.

Oxide-based resistive non-volatile memory cell and method for manufacturing same

A device for selecting a storage cell, includes a first electrode, a second electrode and an oxide layer disposed between the first electrode and the second electrode, wherein the oxide layer is doped with a first element from column IV of the periodic table.

Device for selecting a memory cell

Growing community of inventors

Grenoble, France

Benoît Sklenard