This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Globalwafers Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Benno Orschel and Semiconductor Wafer Measurement
Introduction
Benno Orschel is an inventor based in Frontenac, Missouri. His patent work includes a method for measuring semiconductor-layer thicknesses using reflectometry and image analysis.
Latest Patents
Orschel is associated with 1 patent, titled “Full Wafer Thickness Map Reflectometry.” The invention describes illuminating a semiconductor structure with incoherent, uncollimated light and capturing images with a camera. It uses separate images in three different colors, together with corresponding reference images of a silicon wafer, to produce thickness maps for at least two layers of the structure.
Career Highlights
Orschel’s disclosed invention addresses wafer measurement in semiconductor manufacturing. The method uses color-image data to map layer thicknesses across a wafer.
Collaborations
Orschel is associated with GlobalWafers Co., Ltd., a company in the semiconductor wafer industry.
Conclusion
Benno Orschel’s patent describes a color-based reflectometry method for mapping the thickness of multiple semiconductor layers across a wafer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile