Marburg, Germany

Benjamin Ringler

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Philipps-Universität Marburg. Active years: 2019.


% Patents Active = 100.0

 

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Benjamin Ringler

Introduction

Benjamin Ringler is a notable inventor based in Marburg, Germany. He has made significant contributions to the field of semiconductor technology. His work focuses on the use of binary group 15 element compounds in vapor deposition processes, which has implications for the production of high-quality semiconductors.

Latest Patents

Ringler holds a patent for the "Use of at least one binary group 15 element compound, a 13/15 semiconductor layer and binary group 15 element compounds." This invention provides a method for utilizing binary group 15 element compounds of specific formulas as educts in vapor deposition processes. The compounds allow for the reproducible production of multinary, homogeneous, and ultrapure 13/15 semiconductors at relatively low process temperatures. This innovation significantly reduces nitrogen contamination by eliminating the need for organically substituted nitrogen compounds.

Career Highlights

Throughout his career, Benjamin Ringler has worked with esteemed institutions such as Philipps-Universität Marburg and Umicore AG & Co. KG. His expertise in semiconductor technology has positioned him as a valuable contributor to advancements in this field.

Collaborations

Ringler has collaborated with notable colleagues, including Carsten Von Haenisch and Kerstin Volz. These partnerships have further enhanced his research and development efforts in semiconductor technology.

Conclusion

Benjamin Ringler's innovative work in the field of semiconductors demonstrates his commitment to advancing technology. His contributions have the potential to influence future developments in the industry.

Profile summary based on public USPTO records.
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