The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Sep. 25, 2015
Philipps-universität Marburg, Marburg, DE;
Carsten Von Haenisch, Linkenheim-Hochstetten, DE;
Kerstin Volz, Dautphetal, DE;
Wolfgang Stolz, Marburg, DE;
Eduard Sterzer, Marburg, DE;
Andreas Beyer, Marburg, DE;
Dominik Keiper, Marburg, DE;
Benjamin Ringler, Marburg, DE;
PHILIPPS-UNIVERSITÄT MARBURG, Marburg, DE;
Abstract
The invention provides the use of at least one binary group 15 element compound of the general formula RRE-E'RR(I) or RE(E′RR)2 (II) as the educt in a vapor deposition process. In this case, R, R, Rand Rare independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E′ are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations—compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.