Richardson, TX, United States of America

Benjamin J Sloan

This inventor holds 4 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 1976-1983.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Benjamin J Sloan. Retrieved from https://idiyas.com/inventor/benjamin-j-sloan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 3

Forward Citations = 44(Granted Patents)


Location History:

  • Richardson, TX (US) (1976 - 1979)
  • Garland, TX (US) (1983)

Company Filing History:


Years Active: 1976-1983

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4 patents (USPTO):Explore Patents

Title: The Innovations of Benjamin J. Sloan

Introduction

Benjamin J. Sloan is a notable inventor based in Richardson, TX (US). He has made significant contributions to the field of integrated circuits, holding a total of 4 patents. His work primarily focuses on enhancing the functionality and efficiency of electronic components.

Latest Patents

Sloan's latest patents include the "NPM Anti-saturation clamp for NPN logic gate transistor." This invention describes a bipolar logic gate formed in an isolated N-type epitaxial layer within an integrated circuit device. It features a normally operated vertical NPN switch transistor that is clamped by an inversely operated NPM clamp transistor. The base of the clamp transistor is created through a high-energy boron ion implant into a portion of the N-type epitaxial layer, which extends through the P-type base of the switch transistor. Additionally, multiple outputs are provided by Schottky barrier diodes formed on the N-type epitaxial layer.

Another significant patent is the "Input buffer for integrated injection logic circuits." This invention presents an input buffer gate for integrated injection logic (I²L) circuits, which includes a multiple-collector transistor. The first collector is electrically common with the base, while the second (Schottky) collector receives an input signal. The third collector drives internal I²L gates. This buffer boasts a high input breakdown voltage, virtually no input capacitance, power-up/power-down capability at logic '1', and virtually no input current at logic '0'. It also features very low storage time and an input '1' threshold of about 0.5 volts.

Career Highlights

Benjamin J. Sloan is currently employed at Texas Instruments Corporation, a leading company in the semiconductor industry. His work at Texas Instruments has allowed him to innovate and develop cutting-edge technologies that have a significant impact on electronic devices.

Collaborations

Sloan has collaborated with several talented individuals throughout his career, including James G. Aiken and Scott Weathersby, Jr. These collaborations have contributed to the advancement of technology in the field of integrated circuits.

Conclusion

Benjamin J. Sloan's contributions to the field of integrated circuits through his patents and work at Texas Instruments Corporation highlight his innovative spirit and dedication to advancing technology. His inventions continue to influence the development of electronic components, showcasing the importance of innovation in

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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