The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 1983
Filed:
Apr. 13, 1981
Applicant:
Inventor:
Benjamin J Sloan, Garland, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 15 ; 357 92 ; 357 86 ; 357 46 ;
Abstract
A bipolar logic gate formed in an isolated N-type epitaxial layer in an integrated circuit device includes a normally operated vertical NPN switch transistor clamped by an inversely operated NPM clamp transistor. The base of the clamp transistor is formed by a high energy boron ion implant into a portion of the N-type epitaxial layer extending through the P-type base of the switch transistor. Multiple outputs are provided by Schottky barrier diodes formed on the N-type epitaxial layer.