Hiram, ME, United States of America

Benjamin E Heneveld

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Benjamin E Heneveld. Retrieved from https://idiyas.com/inventor/benjamin-e-heneveld-ldgzjia4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Benjamin E. Heneveld: Inventor in Workpiece Temperature Management.

Introduction

Benjamin E. Heneveld is an inventor associated with Hiram, Maine, and Applied Materials, Inc. His patent work addresses heat management in systems that mount workpieces for ion-beam processing.

Latest Patents

Heneveld is credited with 1 patent: “Managing Beam Power Effects by Varying Base Emissivity.” The invention describes a workpiece mounting system with a chuck and a base. By increasing the base’s emissivity, the system can transfer more heat from the chuck to the base. In some embodiments, emissivity is adjusted according to the ion beam’s power: lower emissivity can help the chuck reach its target temperature quickly at lower power, while higher emissivity can help it maintain that temperature at higher power. The patent also describes high-emissivity coatings and movable shields positioned between the chuck and base.

Career Highlights

Heneveld’s disclosed invention focuses on controlling thermal conditions during ion-beam processing. Its adjustable heat-transfer approaches are designed to accommodate different beam power levels while helping regulate chuck temperature.

Collaborations

The provided information identifies Eric D. Hermanson as Heneveld’s coworker. Both are associated with Applied Materials, Inc.

Conclusion

Benjamin E. Heneveld’s patent presents approaches for managing heat in ion-beam workpiece mounting systems by varying base emissivity, reflecting his contribution to process-temperature control.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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