The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2026

Filed:

Sep. 13, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Dawei Sun, Lynnfield, MA (US);

Eric D. Hermanson, Georgetown, MA (US);

Benjamin E. Heneveld, Hiram, ME (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/20 (2006.01); G02F 1/163 (2006.01); H01J 37/02 (2006.01); H01J 37/317 (2006.01); H05B 1/02 (2006.01); H05B 3/28 (2006.01); H10P 72/72 (2026.01);
U.S. Cl.
CPC ...
H01J 37/20 (2013.01); G02F 1/163 (2013.01); H01J 37/023 (2013.01); H05B 1/0233 (2013.01); H01J 37/3171 (2013.01); H01J 2237/002 (2013.01); H01J 2237/2007 (2013.01); H05B 3/28 (2013.01); H10P 72/722 (2026.01);
Abstract

A workpiece mounting system comprising a chuck and a base is disclosed. The emissivity of the base is increased to allow more heat transfer from the chuck to the base. In some embodiments, the emissivity of the base may be controllable so that for ion beams with lower power levels, the emissivity remains low, enabling the chuck to reach the desired temperature quickly. For ion beams with higher power levels, the emissivity may increase to allow more heat transfer to the base, allowing the chuck to maintain the desired temperature. High emissivity coatings may be applied to the top surface of the base. In other embodiments, a set of movable shields may be disposed between the chuck and the base. The position of the shields may be a function of the power level of the incoming ion beam.


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