Company Filing History:
4 out of 1,724 
1 out of 934 Years Active: 2008-2013
Title: Innovations of Bei Zhu in Semiconductor Technology
Introduction
Bei Zhu is a prominent inventor based in Shanghai, China, known for her contributions to semiconductor technology. With a total of 4 patents, she has made significant advancements in the field, particularly in the design and structure of integrated circuit devices.
Latest Patents
Among her latest patents is the "Silicon germanium and polysilicon gate structure for strained silicon transistors." This invention describes an integrated circuit semiconductor device, such as MOS and CMOS, featuring a semiconductor substrate with a dielectric layer and a gate structure. The design includes sidewall spacers and a recessed region within the gate structure, enhancing the device's performance. Another notable patent is the "Integration scheme for strained source/drain CMOS using oxide hard mask." This method outlines the formation of a semiconductor integrated circuit device, detailing the process of creating a polysilicon gate layer and strained regions in well regions.
Career Highlights
Bei Zhu has worked with leading companies in the semiconductor industry, including Semiconductor Manufacturing International Corporation in Shanghai and Beijing. Her work has been instrumental in advancing semiconductor technologies and improving device performance.
Collaborations
Throughout her career, Bei Zhu has collaborated with notable professionals in the field, including John Chen and Hanming Wu. These collaborations have contributed to her innovative work and the development of cutting-edge technologies.
Conclusion
Bei Zhu's contributions to semiconductor technology through her patents and collaborations highlight her role as a leading inventor in the industry. Her work continues to influence advancements in integrated circuit devices and semiconductor manufacturing.