San Diego, CA, United States of America

Bed Raj Kandel

USPTO Granted Patents = 2 

Average Co-Inventor Count = 1.5

ph-index = 1


Company Filing History:


Years Active: 2023-2025

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2 patents (USPTO):Explore Patents

Title: Bed Raj Kandel: Innovator in Integrated Circuits

Introduction

Bed Raj Kandel is a prominent inventor based in San Diego, California. He has made significant contributions to the field of integrated circuits, holding a total of 2 patents. His work focuses on optimizing metal interconnect spacing to enhance performance in electronic devices.

Latest Patents

Kandel's latest patents include innovative designs for integrated circuits (ICs) that employ multi-pattern metallization. One of his patents describes an IC that features transistors with source and drain metal lines designed to reduce connection resistance. By extending one of the metal lines, he provides additional via landing area, which helps to minimize resistance without increasing capacitance between the lines. Another patent involves high-density metal-oxide semiconductor (MOS) capacitor circuits, which aim to increase capacitive density and reduce the area of MOSCAP array circuits. This design includes bulk tie cells that enhance the density of MOS device arrays.

Career Highlights

Bed Raj Kandel is currently employed at Qualcomm Incorporated, a leading company in the telecommunications and semiconductor industry. His work at Qualcomm has allowed him to push the boundaries of integrated circuit technology, contributing to advancements that benefit various electronic applications.

Collaborations

Kandel has collaborated with notable coworkers, including Katherine Zhang and Thomas Hua-Min Williams. Their combined expertise has fostered an environment of innovation and creativity within their projects.

Conclusion

Bed Raj Kandel's contributions to integrated circuit technology exemplify the spirit of innovation in the electronics field. His patents reflect a commitment to improving performance and efficiency in electronic devices.

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