Kanata, Canada

Barry Wu

This inventor holds 1 USPTO granted patent. Top assignee: Electrophotonic-Ic Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Barry Wu. Retrieved from https://idiyas.com/inventor/barry-wu-zfbxoko5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Barry Wu: Semiconductor Transistor Inventor

Introduction

Barry Wu is an inventor associated with Kanata, Canada, and Electrophotonic-Ic Inc. His patent work concerns semiconductor transistor design and manufacturable device structures.

Latest Patents

Wu is named on one patent, “Type I-II Transistor with a Manufacturable Ledge.” The patent describes a transistor with semiconductor layers forming a base, emitter, and collector. Its emitter includes a lattice-matched ledge made from material that can be selectively etched relative to the emitter or base material, supporting the manufacture of the ledge.

Career Highlights

Wu’s documented patent contribution focuses on transistor architecture and the practical fabrication of semiconductor devices. The supplied information associates him with Electrophotonic-Ic Inc. and records 1 patent.

Collaborations

Wu’s listed coworkers include Lawrence E. Tarof and Dhiraj Kumar. Their names are provided as professional associations, though the available information does not specify their roles in the patent.

Conclusion

Barry Wu’s recorded invention addresses a manufacturable, lattice-matched ledge in a Type I-II transistor, reflecting a focus on semiconductor device design.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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