The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Jul. 21, 2025
Applicant:
Electrophotonic-ic Inc., Kanata, CA;
Inventors:
Lawrence E. Tarof, Kanata, CA;
Barry Wu, Kanata, CA;
Dhiraj Kumar, Redondo Beach, CA (US);
Milton Feng, Kanata, CA;
Assignee:
ElectroPhotonic-IC Inc., Kanata, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 10/80 (2025.01); H01S 3/107 (2006.01); H10D 10/01 (2025.01); H10D 62/824 (2025.01); H10F 30/223 (2025.01); H10F 39/10 (2025.01); H10F 77/124 (2025.01); H10F 77/40 (2025.01);
U.S. Cl.
CPC ...
H10D 10/821 (2025.01); H01S 3/107 (2013.01); H10D 10/021 (2025.01); H10D 62/824 (2025.01); H10F 30/223 (2025.01); H10F 39/103 (2025.01); H10F 77/1248 (2025.01); H10F 77/413 (2025.01);
Abstract
A transistor comprising a plurality of semiconductor layers arranged to form a base, an emitter and a collector wherein the emitter is of a first semiconductor material and comprises an emitter ledge being made from a material which is selectively etchable relative to the emitter or base material to produce the emitter ledge that is lattice matched.