Palo Alto, CA, United States of America

Barmak S Sani


Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 12(Granted Patents)


Location History:

  • Cupertino, CA (US) (1990)
  • Palo Alto, CA (US) (1994)

Company Filing History:


Years Active: 1990-1994

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2 patents (USPTO):

Title: **Innovator Spotlight: Barmak S. Sani**

Introduction

Barmak S. Sani is a notable inventor based in Palo Alto, California, renowned for his contributions to the field of memory device technologies. With two patents to his name, he has made significant advancements that enhance memory device performance and reliability.

Latest Patents

Barmak S. Sani's latest patents reflect his innovative approach to overcoming challenges in memory technology. One patent is titled "Structure and method for compensating for programming threshold shift." This invention addresses the neighbor effect when reading the state of a memory cell in a virtual ground memory array. By incorporating an unprogrammed replica EPROM transistor in parallel with the neighboring memory cell during the read cycle, the invention compensates for inaccuracies caused by nearby programmed cells. This ensures that the voltage maximum during the read cycle meets or exceeds that during programming, thus improving overall functionality.

Another of his notable patents is titled "Output circuit for driving a memory device output lead," which introduces a novel circuit integrated with a memory device's sense amplifier. This design minimizes the delay between opening transfer gates and obtaining valid output data on the output lead. By utilizing large transistors in the second inverter and maintaining minimal power consumption during specific operational modes, Sani's invention substantially enhances the efficiency of memory devices.

Career Highlights

Barmak S. Sani is currently employed at Waferscale Integration, Inc., where he continues to push the boundaries of memory technology through his research and inventions. His emphasis on innovative problem-solving has established him as a valuable asset in the industry.

Collaborations

Throughout his career, Barmak has collaborated with talented professionals, including colleagues Boaz Eitan and Alexander Shubat. These collaborations have fostered a creative environment where innovative ideas can flourish, leading to successful patent applications and advancements in memory device technology.

Conclusion

Barmak S. Sani's work exemplifies the spirit of innovation, highlighting his significant contributions to memory technology through his patents. As he continues to collaborate with peers and develop groundbreaking solutions, he remains a key figure in enhancing the performance and reliability of modern memory devices.

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