Milan, Italy

Barbara Zanderighi

This inventor holds 3 USPTO granted patents and 2 published patent applications. Top assignees: Micron Technology Incorporated, Stmicroelectronics S.r.l.. Active years: 2007-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Barbara Zanderighi. Retrieved from https://idiyas.com/inventor/barbara-zanderighi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 2.3

ph-index = 2

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 2007-2016

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3 patents (USPTO):Explore Patents

Title: Barbara Zanderighi: Innovator in Phase Change Memory Technology

Introduction

Barbara Zanderighi is an accomplished inventor based in Milan, Italy, known for her significant contributions to the field of memory technology. With three patents to her name, she has made strides in developing advanced solutions that enhance data storage capabilities.

Latest Patents

Zanderighi's most notable patents include her innovative work on a phase change memory cell. This invention features a self-aligned vertical heater and a low resistivity interface, aimed at improving the performance and reliability of memory devices. The design incorporates a phase change chalcogenide material deposited directly on the vertical heater element, which is characterized by its L-shaped configuration. This includes a curved vertical wall designed to align with the wordline direction and a horizontal base. Notably, the low resistivity interface material is meticulously deposited into a trench with a negative profile using a Physical Vapor Deposition (PVD) technique. The upper surface of this material may also exhibit a tapered bird-beak extension, showcasing Zanderighi's inventive approach to enhancing memory cell architecture.

Career Highlights

Zanderighi has honed her expertise while working for prominent companies in the technology sector, including Micron Technology Incorporated and STMicroelectronics S.r.l. Her tenure at these organizations has not only allowed her to innovate but also to contribute to the development of next-generation memory solutions.

Collaborations

Throughout her career, Barbara has worked alongside talented colleagues such as Francesco Maria Pipia and Simone Alba. These collaborations have fostered an environment of creativity and innovation, propelling their joint efforts to produce groundbreaking advancements in memory technology.

Conclusion

Barbara Zanderighi stands out as a leading figure in the realm of phase change memory technology. Her inventive designs and practical applications reflect her dedication to advancing the field, making her an inspiring role model for future inventors. With her continued contributions, Zanderighi is poised to influence the landscape of data storage technology for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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