Portland, OR, United States of America

Barbara Greenebaum

This inventor holds 2 USPTO granted patents. Top assignee: Intel Corporation. Active years: 1993-1994.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 40(Granted Patents)


Company Filing History:


Years Active: 1993-1994

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2 patents (USPTO):Explore Patents

Title: Barbara Greenebaum: Innovator in Semiconductor Technology

Introduction

Barbara Greenebaum is a prominent inventor based in Portland, OR (US). She has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase her innovative spirit and technical expertise.

Latest Patents

Her latest patents include a tri-layer titanium coating for an aluminum layer of a semiconductor device. This invention involves forming an aluminum layer used for interconnecting individual devices of an integrated circuit on a semiconductor material. The process begins with the deposition of a first titanium nitride layer on the aluminum layer, followed by a titanium layer on the first titanium nitride layer. Finally, a second titanium nitride layer is deposited on the titanium layer. This tri-layer titanium coating effectively prevents the formation of Al.sub.2 O.sub.3 and AlF.sub.3 during the etching of a via hole in an intermetal dielectric layer deposited above the second titanium nitride layer.

Career Highlights

Barbara Greenebaum is currently employed at Intel Corporation, where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in advancing the efficiency and reliability of integrated circuits.

Collaborations

Throughout her career, Barbara has collaborated with notable colleagues, including Simon Yang and Melton C Bost. These partnerships have fostered a creative environment that encourages innovation and problem-solving.

Conclusion

Barbara Greenebaum's contributions to semiconductor technology through her patents and collaborations highlight her role as a leading inventor in the field. Her work continues to influence the development of advanced electronic devices.

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