Baosuo Zhou

Title: Baosuo Zhou: Innovator in Integrated Circuit Memory Technology

Introduction

Baosuo Zhou is a notable inventor based in Redwood, California. He has made significant contributions to the field of integrated circuit memory technology. His innovative work has led to the development of a unique patent that enhances memory block isolation.

Latest Patents

Baosuo Zhou holds a patent for "Block-to-block isolation and deep contact using pillars in a memory array." This patent describes an integrated circuit memory that includes a first memory block and an adjacent second memory block. The first memory block comprises a first memory pillar around which a first memory cell is formed. The second memory block comprises a second memory pillar around which a second memory cell is formed. An isolation or slit area between the first and second memory blocks electrically isolates these blocks. The slit area includes a slit pillar, which is a dummy pillar, and insulator material that electrically isolates the slit pillar from a Word Line (WL) through which it passes. This innovative design allows for improved electrical isolation between memory blocks.

Career Highlights

Baosuo Zhou is currently employed at Intel Corporation, a leading technology company known for its advancements in semiconductor manufacturing. His work at Intel has positioned him as a key player in the development of cutting-edge memory technologies.

Collaborations

Throughout his career, Baosuo Zhou has collaborated with talented individuals such as Deepak Thimmegowda and Brian J Cleereman. These collaborations have contributed to the success of his projects and the advancement of memory technology.

Conclusion

Baosuo Zhou's contributions to integrated circuit memory technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of memory systems in modern electronics.