Baojie Yan

Title: The Innovative Contributions of Baojie Yan

Introduction

Baojie Yan is a notable inventor based in Rochester Hills, MI (US). He has made significant contributions to the field of semiconductor materials, particularly through his innovative patent. His work has implications for the development of advanced photovoltaic devices.

Latest Patents

Baojie Yan holds a patent for a "Method for depositing high-quality microcrystalline semiconductor materials." This process involves the plasma deposition of a layer of microcrystalline semiconductor material. The method energizes a process gas, which includes a precursor of the semiconductor material and a diluent, using electromagnetic energy to create plasma. This plasma then deposits a layer of the microcrystalline semiconductor material onto a substrate. Notably, the concentration of the diluent in the process gas is varied based on the thickness of the deposited layer. This innovative process is also applicable in the preparation of an N-I-P type photovoltaic device.

Career Highlights

Baojie Yan is associated with United Solar Ovonic Corporation, where he has been able to apply his expertise in semiconductor technology. His work at the company has contributed to advancements in solar energy solutions.

Collaborations

He has collaborated with notable colleagues, including Subhendu Guha and Chi C Yang, who have also made significant contributions to the field of semiconductor research.

Conclusion

Baojie Yan's innovative work in semiconductor materials and his patent for a novel deposition method highlight his contributions to technology and renewable energy. His efforts continue to influence advancements in photovoltaic devices and semiconductor applications.