The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Jan. 27, 2004
Subhendu Guha, Bloomfield Hills, MI (US);
Chi C. Yang, Troy, MI (US);
Baojie Yan, Rochester Hills, MI (US);
Subhendu Guha, Bloomfield Hills, MI (US);
Chi C. Yang, Troy, MI (US);
Baojie Yan, Rochester Hills, MI (US);
United Solar Ovonic LLC, Auburn Hills, MI (US);
Abstract
A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.