Bao Guang Wen

Title: The Innovations of Bao Guang Wen

Introduction

Bao Guang Wen is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique method for forming metal-insulator-metal (MIM) capacitors.

Latest Patents

One of his key patents is titled "Method for forming a MIM (metal-insulator-metal) capacitor." This patent describes methods for forming a MIM capacitor using an organic anti-reflective coating (ARC). The process involves forming the first electrode of the MIM capacitor from a first metal layer, applying the organic ARC, and then forming the second electrode from a second metal layer. The organic ARC is subsequently removed using a nominal clean technique. This removal enhances the performance of the MIM capacitor, resulting in an increased breakdown voltage and decreased leakage current. He holds 1 patent in this area.

Career Highlights

Bao Guang Wen is associated with Chartered Semiconductor Manufacturing Ltd, a corporation known for its advancements in semiconductor manufacturing. His work at this company has been instrumental in pushing the boundaries of capacitor technology.

Collaborations

He has collaborated with notable coworkers such as Tjoa Tjin Tjin and Sanford Chu, contributing to various projects within the semiconductor field.

Conclusion

Bao Guang Wen's innovative methods for forming MIM capacitors represent a significant advancement in semiconductor technology. His contributions continue to influence the industry and pave the way for future innovations.