This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Ban Wang: Memory-Device Patent Inventor
Introduction
Ban Wang is an inventor based in Wuhan, China. His patent work includes a method for detecting word line shorts in memory devices, and he is associated with Yangtze Memory Technologies Co., Ltd.
Latest Patents
Wang is named on 1 patent: “Method and Device for Detecting Word Line Shorts in Memory Device.” The invention describes identifying a region of interest in a bright voltage contrast image of word-line contact through-holes, determining the coordinates of each contact, and examining grayscale values at those positions to identify defective contacts. The method also displays a contact when it is determined to be defective.
Career Highlights
Wang’s listed patent focuses on detecting defects in memory-device word lines through image analysis. The approach uses differences in electrical charging and image grayscale values to help locate potentially defective contacts.
Collaborations
Wang’s listed coworkers include Wenqi Wang and Wenlong Li. His patent is associated with Yangtze Memory Technologies Co., Ltd.
Conclusion
Ban Wang’s patent work addresses the detection and display of defective word-line contacts, contributing a targeted inspection method for memory devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile