This inventor holds 3 USPTO granted patents. Top assignee: National Semiconductor Corporation. Active years: 1992-1996.
Company Filing History:
Years Active: 1992-1996
Title: The Innovative Contributions of Bamdad Bastani
Introduction
Bamdad Bastani is a notable inventor based in Danville, CA (US), recognized for his significant contributions to semiconductor technology. With a total of 3 patents to his name, Bastani has made strides in the field of electronics, particularly in the fabrication of bipolar transistors and polysilicon layers.
Latest Patents
Bastani's latest patents include a method for fabricating two loads with different resistance levels. This invention outlines a process where a layer of polysilicon is formed on a semiconductor circuit structure, followed by the implantation of a dopant to create regions with varying resistance levels. Another significant patent focuses on reducing the base resistance of a bipolar junction transistor (BJT) by forming a self-aligned silicide in the single-crystal region of the extrinsic base. This innovation effectively eliminates contact resistance and enhances performance, particularly in sub-micron geometries.
Career Highlights
Bamdad Bastani has built his career at National Semiconductor Corporation, where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of high-performance electronic components that are essential in modern devices.
Collaborations
Throughout his career, Bastani has collaborated with esteemed colleagues such as James L Bouknight and Steve M Leibiger, further enhancing the innovative environment at National Semiconductor Corporation.
Conclusion
Bamdad Bastani's contributions to the field of semiconductor technology through his patents and work at National Semiconductor Corporation highlight his role as a key innovator. His advancements in the fabrication of electronic components continue to influence the industry today.