Baek-gyun Lim

Title: Baek-gyun Lim: Innovator in Semiconductor Technology

Introduction

Baek-gyun Lim is a prominent inventor based in Kyungki-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for enhancing device performance.

Latest Patents

Baek-gyun Lim holds a patent for a "Method for forming silicon-oxynitride layer on semiconductor device." This invention provides improved performance at high integration levels by utilizing a gate insulation layer formed from silicon-oxynitride. This layer prevents impurities in the doped gate electrode from diffusing into the semiconductor substrate during fabrication processes. The method employs a vertical diffusion furnace to increase productivity and achieve a uniform nitrogen density in the silicon-oxynitride layer. The process includes forming an initial oxide layer on a semiconductor substrate, converting it into a pure oxide layer, and finally transforming it into a silicon-oxynitride layer.

Career Highlights

Baek-gyun Lim is associated with Samsung Electronics Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of devices that perform better under high integration levels.

Collaborations

He has collaborated with notable colleagues, including Chang-jip Yang and Eu-seok Kim, to further enhance the innovations in semiconductor technology.

Conclusion

Baek-gyun Lim's contributions to semiconductor technology through his patented methods demonstrate his commitment to innovation and excellence in the field. His work continues to influence the performance of modern semiconductor devices.