San Jose, CA, United States of America

Badredin Fatemizadeh

This inventor holds 4 USPTO granted patents. Top assignees: Power-One Limited, Tram, Inc.. Active years: 2004-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Badredin Fatemizadeh. Retrieved from https://idiyas.com/inventor/badredin-fatemizadeh-mlw99uy2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 2004-2007

Loading Chart...
4 patents (USPTO):Explore Patents

Title: The Innovative Journey of Inventor Badredin Fatemizadeh

Introduction:

Badredin Fatemizadeh, a visionary inventor based in San Jose, CA, has made significant contributions to the field of semiconductor technology. With a portfolio of four patents, his groundbreaking work has paved the way for advancements in high voltage applications.

Latest Patents:

Fatemizadeh's latest patents include the "Vertical power JFET with low on-resistance for high voltage applications" and the "Low cost dielectric isolation method for integration of vertical power MOSFET and lateral driver devices." These inventions demonstrate his expertise in optimizing power efficiency and device integration in semiconductor devices.

Career Highlights:

Throughout his career, Fatemizadeh has brought his innovative ideas to companies such as Tram, Inc. and Power-One Limited. His expertise in semiconductor technology has led to the successful development and implementation of cutting-edge solutions in the industry.

Collaborations:

Fatemizadeh has collaborated with esteemed coworkers such as Farid Nemati and Andrew Edward Horch. Together, they have worked on projects that have pushed the boundaries of semiconductor technology and revolutionized the way power devices are integrated and optimized.

Conclusion:

Inventor Badredin Fatemizadeh's relentless pursuit of innovation and his valuable contributions to the semiconductor industry have solidified his place as a key figure in high voltage applications. His patents and collaborative efforts reflect his dedication to advancing technology and driving impactful change in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…