Kawasaki, Japan

Ayaka Okumura

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Renesas Electronics Corporation. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ayaka Okumura. Retrieved from https://idiyas.com/inventor/ayaka-okumura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Ayaka Okumura: Innovator in Semiconductor Technology

Introduction

Ayaka Okumura is a prominent inventor based in Kawasaki, Japan. She has made significant contributions to the field of semiconductor technology, particularly through her innovative patent that enhances the characteristics of semiconductor devices.

Latest Patents

Okumura holds a patent titled "Method of manufacturing semiconductor device and semiconductor device." This invention focuses on improving the characteristics of semiconductor devices by forming an aluminum nitride film over the pad region. This method effectively prevents the formation of foreign substances generated over the pad region, ensuring the integrity of the semiconductor device during inspection and bonding steps.

Career Highlights

Ayaka Okumura is associated with Renesas Electronics Corporation, where she applies her expertise in semiconductor manufacturing. Her work has been instrumental in advancing the technology used in modern electronic devices.

Collaborations

She collaborates with notable colleagues, including Katsuhiko Hotta and Yoshinori Kondo, contributing to a dynamic team focused on innovation in semiconductor technology.

Conclusion

Ayaka Okumura's contributions to semiconductor technology through her patent demonstrate her commitment to innovation and excellence in her field. Her work continues to influence the development of advanced electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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