Avinesh K Gupta

Title: Avinesh K Gupta: Innovator in SiC Substrate Fabrication

Introduction

Avinesh K Gupta is a notable inventor based in Basking Ridge, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of silicon carbide (SiC) substrates. His innovative methods have the potential to enhance the performance of electronic devices.

Latest Patents

Avinesh holds 1 patent for his work titled "Fabrication of SiC substrates with low warp and bow." This patent describes a method of fabricating an SiC single crystal that involves physical vapor transport (PVT) growing on a seed crystal under a temperature gradient. The process ensures that the early-to-grow portion of the SiC single crystal is at a lower temperature than the later-to-grow portion. After growth, the SiC single crystal undergoes annealing in a reverse temperature gradient, further optimizing its properties.

Career Highlights

Avinesh K Gupta is currently employed at II-VI Incorporated, a company known for its advancements in materials and optoelectronic components. His work at II-VI has positioned him as a key player in the development of cutting-edge semiconductor technologies.

Collaborations

Throughout his career, Avinesh has collaborated with talented individuals such as Ping Wu and Ilya Zwieback. These collaborations have fostered innovation and contributed to the success of various projects within the semiconductor industry.

Conclusion

Avinesh K Gupta's contributions to SiC substrate fabrication exemplify the impact of innovative thinking in technology. His patent and work at II-VI Incorporated highlight his role as a significant inventor in the field.