Ii-vi Incorporated

Avinesh K Gupta

Ilya Zwieback

Edward Semenas

Ping Wu

A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal.

Growing community of inventors

Basking Ridge, NJ, United States of America

Avinesh K Gupta