The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Jun. 26, 2008
Ping Wu, Warren, NJ (US);
Ilya Zwieback, Township of Washington, NJ (US);
Avinesh K. Gupta, Basking Ridge, NJ (US);
Edward Semenas, Allentown, PA (US);
Ping Wu, Warren, NJ (US);
Ilya Zwieback, Township of Washington, NJ (US);
Avinesh K. Gupta, Basking Ridge, NJ (US);
Edward Semenas, Allentown, PA (US);
II-VI Incorporated, Saxonburg, PA (US);
Abstract
A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal.